WebbAbstract Bi2Te3 has drawn great attention in recent years as both a topological insulator and the best thermoelectric material at room temperature. We report on Raman spectroscopic study on Bi2Te3 thin films with thicknesses of 20–50 nm grown on GaN by molecular beam epitaxy. WebbTo investigate the thermal properties of the Bi2Te3 nanostructure, a nondestructive technique based on temperature dependent Raman mapping was carried out. The …
Raman scattering investigation of Bi2Te3 hexagonal nanoplates prepared ...
Bismuth telluride is a well-studied topological insulator. Its physical properties have been shown to change at highly reduced thicknesses, when its conducting surface states are exposed and isolated. These thin samples are obtained through either epitaxy or mechanical exfoliation. Epitaxial growth methods such as molecular beam epitaxy and metal organic chemical vapor deposition are common methods of obtaining thin Bi2Te3 samples. The stoichiometry of sampl… Webb(a) Raman spectra of reference bulk Bi 2 Te 3 crystal and few-quintuple films. Note that A 1 u mode at ∼ 117 cm − 1 becomes Raman active only in the thin films. (b) Schematic of … prince ls 3000-1 valve seal kit
In situ Raman spectroscopy of topological insulator …
Webb19 sep. 2014 · Normalized Raman spectra of the 830 nm-thick Bi 2 Te 3 layer measured on an as-grown spot with low excitation power (symbols) and after 3 h of exposure to increased excitation (solid line). Dashed line: the spectrum of the 200 nm-thick Te layer. Download figure: Standard image High-resolution image WebbAbstract Raman and Brillouin spectroscopy have been employed to investigate the phonon dynamics of Bi 2Se 3, Bi 2Te 3, Sb 2Te 3 (all topological insulators) and WSe 2 (a 2D semi- conductor). In the frequency range studied, two peaks were observed in the Raman WebbWe report on Raman spectroscopic study on Bi 2 Te 3 thin films with thicknesses of 20–50 nm grown on GaN by molecular beam epitaxy. All the four classical optical phonon … please mr postman- the carpenters